ECH8420 no.8993-1/4 features ? on-resistance r ds (on)1=5.2m (typ.) ? 1.8v drive ? halogen free compliance speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit drain-to-source voltage v dss 20 v gate-to-source voltage v gss 12 v drain current (dc) i d 14 a drain current (pulse) i dp pw 10 s, duty cycle 1% 50 a allowable power dissipation p d when mounted on ceramic substrate (900mm 2 0.8mm) 1.6 w channel temperature tch 150 c storage temperature tstg --55 to +150 c package dimensions unit : mm (typ) 7011a-002 ordering number : en8993 o1911pe tkim tc-00002660 sanyo semiconductors data sheet ECH8420 n-channel silicon mosfet general-purpose switching device applications http:// semicon.sanyo.com/en/network product & package information ? package : ech8 ? jeita, jedec : - ? minimum packing quantity : 3,000 pcs./reel packing type : tl marking electrical connection za lot no. tl 87 6 5 12 3 4 1 : source 2 : source 3 : source 4 : gate 5 : drain 6 : drain 7 : drain 8 : drain sanyo : ech8 1 4 85 0.15 0 to 0.02 0.25 0.25 2.8 2.3 0.65 2.9 0.3 0.9 0.07 top view bottom view
ECH8420 no.8993-2/4 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max drain-to-source breakdown voltage v (br)dss i d =1ma, v gs =0v 20 v zero-gate voltage drain current i dss v ds =20v, v gs =0v 1 a gate-to-source leakage current i gss v gs =8v, v ds =0v 10 a cutoff voltage v gs (off) v ds =10v, i d =1ma 0.4 1.3 v forward transfer admittance | yfs | v ds =10v, i d =7a 14.5 s static drain-to-source on-state resistance r ds (on)1 i d =7a, v gs =4.5v 5.2 6.8 m r ds (on)2 i d =4a, v gs =2.5v 8 11.5 m r ds (on)3 i d =2a, v gs =1.8v 15 22.5 m input capacitance ciss v ds =10v, f=1mhz 2430 pf output capacitance coss 410 pf reverse transfer capacitance crss 330 pf turn-on delay time t d (on) see speci ed test circuit. 21 ns rise time t r 88 ns turn-off delay time t d (off) 210 ns fall time t f 115 ns total gate charge qg v ds =10v, v gs =4.5v, i d =14a 29 nc gate-to-source charge qgs 4.8 nc gate-to-drain ?miller? charge qgd 8.7 nc diode forward voltage v sd i s =14a, v gs =0v 0.75 1.2 v switching time test circuit pw=10 s d.c. 1% p. g 50 g s d i d =7a r l =1.43 v dd =10v v out ECH8420 v in 4.5v 0v v in i d -- v gs drain current, i d -- a gate-to-source voltage, v gs -- v it16531 0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 21 20 19 17 18 15 13 10 16 12 14 11 7 5 1 3 8 9 6 2 4 -- 2 5 c 25 c ta=75 c v ds =10v drain-to-source voltage, v ds -- v i d -- v ds drain current, i d -- a 0 4 6 8 2 14 12 10 0 it16625 0.4 0.2 0.1 0.6 0.8 0.5 0.3 0.7 0.9 1.0 v gs =1.5v 4.5v 10.0v 1.8v 2.5v 6.0v 8.0v
ECH8420 no.8993-3/4 static drain-to-source on-state resistance, r ds (on) -- m ambient temperature, ta -- c r ds (on) -- ta i s -- v sd source current, i s -- a diode forward voltage, v sd -- v ciss, coss, crss -- v ds ciss, coss, crss -- pf drain-to-source voltage, v ds -- v drain current, i d -- a | y fs | -- i d forward transfer admittance, | y fs | -- s sw time -- i d switching time, sw time -- ns drain current, i d -- a drain-to-source voltage, v ds -- v drain current, i d -- a total gate charge, qg -- nc v gs -- qg gate-to-source voltage, v gs -- v it16538 0 0 30 20 5 4.5 4.0 3.5 3.0 2.5 2.0 1.5 0.5 1.0 25 15 10 0.01 0.1 1.0 23 57 23 57 23 57 23 5 10 100 7 0.01 0.1 1.0 10 100 7 5 3 2 7 5 3 2 7 5 3 2 5 7 3 2 i dp =50a (pw 10 s) i d =14a 100ms 1ms 10ms operation in this area is limited by r ds (on). dc operation (ta=25 c) it16539 0 100 5 3 2 1000 10000 7 5 3 2 7 20 2 4 6 8 12 14 16 18 10 it16537 it16536 it16535 0 0.2 0.5 0.7 0.1 0.4 0.3 0.6 0.8 0.9 1.0 0.001 0.01 7 5 3 2 2 0.1 7 5 3 2 it16534 25 c --25 c f=1mhz ciss coss crss ta=75 c 0.01 0.1 2 23 57 1.0 2 357 2 10 357 2 3 5 7 2 0.1 1.0 2 3 5 7 10 3 5 7 100 v ds =10v ta= --25 c 75 c v gs =0v 10 3 2 100 1000 5 7 3 2 5 7 0.1 1.0 2 23 57 10 357 2 100 357 v dd =15v v gs =10v t d (off) t f t d (on) t r it16533 --50 0 50 100 150 200 0 25 20 5 10 15 v gs =2.5v, i d =4a v gs =1.8v, i d =2a v gs =4.5v, i d =7a 100 357 25 c 1.0 100 7 5 3 2 1.0 7 5 3 2 7 5 3 v ds =10v i d =14a ta=25 c single pulse when mounted on ceramic substrate (900mm 2 0.8mm) a s o gate-to-source voltage, v gs -- v static drain-to-source on-state resistance, r ds (on) -- m r ds (on) -- v gs it16532 0 0 40 35 12 246810 20 15 30 25 10 5 ta=25 c i d =2a 7a 4a
ECH8420 no.8993-4/4 ps this catalog provides information as of october, 2011. speci cations and information herein are subject to change without notice. note on usage : since the ECH8420 is a mosfet product, please avoid using this device in the vicinity of highly charged objects. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. ambient temperature, ta -- c p d -- ta allowable power dissipation, p d -- w it16540 0 0 20 40 0.4 60 80 100 120 140 160 0.8 1.2 1.6 1.8 0.2 0.6 1.0 1.4 when mounted on ceramic substrate (900mm 2 0.8mm)
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